v drm volts v rrm 200 300 400 i t(av) 0.3 amps v tsm 6 amps i gtm 0.1 amps p gm 0.1 watts p g(av) 0.05 watts i drm 10 m amps i rrm 200 v tm 1.7 volts i ho 5 mamps critical 5 volts/ m sec dv/dt i gt 200 m amps v gt 0.8 volts t gt 2.2 m sec r q jc 75 o c/watt t stg -40 to 150 o c t oper -40 to 110 o c repetitive peak off-state voltage and repetitive peak reverse voltage @ t c = 125 o c fcr0320 FCR0330 fcr0340 rms on-state current @ t c = 50 o c and conduction angle of 180 o peak-surge on-state current one cycle @ 50hz or 60hz peak gate-trigger current for 3 m s max. peak gate-power dissipation @ i gt < i gtm average gate-power dissipation peak off-state current (1) t c = 25 o c @ rated reverse voltage t c = 125 o c maximum on-state voltage @ t c = 25 o c and i t = 0.3a dc holding current (1), gate open, t c = 25 o c critical rate-of-rise of off-state voltage (1) gate open, t c = 110 o c dc gate -trigger current for anode (2) dc gate -trigger voltage for anode (2) gate-controlled turn-on time, t d + t r i gt = 10ma, t c = 25 o c typical thermal resistance junction to case storage temperature range operating temperature range description data sheet 0.3 amp silicon controlled rectifiers fcr0320...40 series maximum ratings and electrical characteristics symbol value units notes: (1) r g-k = 1k w . (2) voltage = 7vdc, r l = 100 w , t c = 25 o c. mechanical dimensions features n directly driven with ic and mos device n void-free glass passivated chips n available in voltage ratings from 200 to 400 volts n sensitive gate trigger current 1 2 3 to-92 1. cathode 2. gate 3. anode
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